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| DC COMPONENTS CO., LTD. R DMBT2222 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 60 30 5 600 250 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 60 30 5 35 50 75 100 30 250 2% Typ - Max 0.01 10 0.4 1.6 1.3 2.6 300 - Unit V V V A nA V V V V MHz Test Conditions IC=10A IC=10mA IE=10A VCB=50V VCE=60V, VEB(off)=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V IC=20mA, VCE=20V, f=100MHz VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 DC Current Gain (1) hFE3 hFE4 hFE5 Transition Frequency (1)Pulse Test: Pulse Width fT 380s, Duty Cycle |
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